MACOM launches 10W broadband, multi-stage GaN-on-Si power amplifier module with flexible mounting capability

MACOM Technology Solutions Inc (which makes semiconductors, components and subassemblies for RF, microwave, millimeter-wave and lightwave applications) has expanded its gallium nitride on silicon (GaN-on-Si) power amplifier portfolio by launching the MAMG-100227-010 broadband PA module optimized for use in land mobile radio (LMR) systems, wireless public safety communications, and military tactical communications and electronic countermeasures (ECM).
Combining the design efficiencies of a fully matched (50Ω), two-stage PA architecture with top-side and bottom-side mounting configurability, the MAMG-100227-010 can enable design flexibility for radios balancing stringent size, weight and power (SWaP) specifications.

The MAMG-100227-010 leverages GaN-on-Si to achieve an extremely wide frequency bandwidth of 225–2600MHz, with 10W CW output power, 40% typical power added efficiency (PAE) over the band, 22dB typical power gain, and up to 36V operation (28V typical). Provided in a compact 14mm x 18mm air-cavity laminate package with integrated gold-plated copper heatsink, it can eliminate the need for additional componentry and PCB space required for unmatched PA architectures, with top and bottom accessibility for improved mounting and heat-sinking agility.

“The MAMG-100227-010 builds on MACOM’s rich legacy of providing high-performance GaN-on-Si solutions with field-proven reliability,” says Mark Murphy, senior director of marketing, RF Power and Basestation. “For customers seeking exceptional design flexibility, the MAMG-100227-010 exemplifies the design and application expertise that MACOM provides across a wide range of broadband frequencies and power levels,” he adds.

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